Electroabsorption in gated GaAs nanophotonic waveguides
- URL: http://arxiv.org/abs/2102.06119v1
- Date: Thu, 11 Feb 2021 16:59:00 GMT
- Title: Electroabsorption in gated GaAs nanophotonic waveguides
- Authors: Ying Wang, Ravitej Uppu, Xiaoyan Zhou, Camille Papon, Sven Scholz,
Andreas D. Wieck, Arne Ludwig, Peter Lodahl, Leonardo Midolo
- Abstract summary: We report on the analysis of electroabsorption in thin GaAs/Al$_0.3$Ga$_0.7$As nanophotonic waveguides with an embedded $p$-$i$-$n$ junction.
By measuring the transmission through waveguides of different lengths, we derive the propagation loss as a function of electric field, wavelength, and temperature.
- Score: 2.8863738687110403
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: We report on the analysis of electroabsorption in thin
GaAs/Al$_{0.3}$Ga$_{0.7}$As nanophotonic waveguides with an embedded
$p$-$i$-$n$ junction. By measuring the transmission through waveguides of
different lengths, we derive the propagation loss as a function of electric
field, wavelength, and temperature. The results are in good agreement with the
Franz-Keldysh model of electroabsorption extending over 200 meV below the GaAs
bandgap, i.e. in the 910--970 nm wavelength range. We find a pronounced
residual absorption in forward bias, which we attribute to Fermi-level pinning
at the waveguide surface, producing over 20 dB/mm loss at room temperature.
These results are essential for understanding the origin of loss in
nanophotonic devices operating in the emission range of self-assembled InAs
semiconductor quantum dots, towards the realization of scalable quantum
photonic integrated circuits.
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