Optical transition parameters of the silicon T centre

• URL: http://arxiv.org/abs/2405.07144v2
• Date: Fri, 08 Nov 2024 19:16:09 GMT
• Title: Optical transition parameters of the silicon T centre
• Authors: Chloe Clear, Sara Hosseini, Amirhossein AlizadehKhaledi, Nicholas Brunelle, Austin Woolverton, Joshua Kanaganayagam, Moein Kazemi, Camille Chartrand, Mehdi Keshavarz, Yihuang Xiong, Louis Alaerts, Oney O. Soykal, Geoffroy Hautier, Valentin Karassiouk, Mike Thewalt, Daniel Higginbottom, Stephanie Simmons,
• Abstract summary: silicon T centre's narrow, telecommunications-band optical emission, long spin coherence, and direct photonic integration have spurred interest. Key parameters of the T centre's spin-selective optical transitions remain undetermined or ambiguous in literature. We provide a model of the T centre's optical and spin properties under strain, electric, and magnetic fields.
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• Abstract: The silicon T centre's narrow, telecommunications-band optical emission, long spin coherence, and direct photonic integration have spurred interest in this emitter as a spin-photon interface for distributed quantum computing and networking. However, key parameters of the T centre's spin-selective optical transitions remain undetermined or ambiguous in literature. In this paper we present a Hamiltonian of the T centre TX state and determine key parameters of the optical transition from T$_0$ to TX$_0$ from a combined analysis of published results, density functional theory, and new spectroscopy. We resolve ambiguous values of the internal defect potential in the literature, and we present the first measurements of electrically tuned T centre emission. As a result, we provide a model of the T centre's optical and spin properties under strain, electric, and magnetic fields that can be utilized for realizing quantum technologies.

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