Measurement of tunnel coupling in a Si double quantum dot based on charge sensing

• URL: http://arxiv.org/abs/2103.06409v1
• Date: Thu, 11 Mar 2021 01:47:18 GMT
• Title: Measurement of tunnel coupling in a Si double quantum dot based on charge sensing
• Authors: Xinyu Zhao and Xuedong Hu
• Abstract summary: We propose a four-level model to extract tunnel coupling information for a Si double quantum dot (DQD) Our theory can help determine both intra- and inter-valley tunnel coupling with high accuracy, and is robust against system parameters such as valley splittings in the individual quantum dots.
• Score: 3.585220964019024
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: In Si quantum dots, valley degree of freedom, in particular the generally small valley splitting and the dot-dependent valley-orbit phase, adds complexities to the low-energy electron dynamics and the associated spin qubit manipulation. Here we propose a four-level model to extract tunnel coupling information for a Si double quantum dot (DQD). This scheme is based on a charge sensing measurement on the ground state as proposed in the widely used protocol for a GaAs double dot [DiCarlo et. al., PRL 92. 226801]. Our theory can help determine both intra- and inter-valley tunnel coupling with high accuracy, and is robust against system parameters such as valley splittings in the individual quantum dots.

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