A hole spin qubit in a fin field-effect transistor above 4 kelvin

• URL: http://arxiv.org/abs/2103.07369v2
• Date: Mon, 6 Feb 2023 16:32:38 GMT
• Title: A hole spin qubit in a fin field-effect transistor above 4 kelvin
• Authors: Leon C. Camenzind, Simon Geyer, Andreas Fuhrer, Richard J. Warburton, Dominik M. Zumb\"uhl, Andreas V. Kuhlmann
• Abstract summary: We show that silicon FinFETs can host spin qubits operating above 4K. We achieve fast electrical control of hole spins with frequencies driving up to 150MHz, single-qubit gate fidelities at the fault-tolerance threshold, and a Rabi oscillation quality factor greater than 87.
• Score: 0.0
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: The greatest challenge in quantum computing is achieving scalability. Classical computing previously faced a scalability issue, solved with silicon chips hosting billions of fin field-effect transistors (FinFETs). These FinFET devices are small enough for quantum applications: at low temperatures, an electron or hole trapped under the gate serves as a spin qubit. Such an approach potentially allows the quantum hardware and its classical control electronics to be integrated on the same chip. However, this requires qubit operation at temperatures above 1K, where the cooling overcomes heat dissipation. Here, we show that silicon FinFETs can host spin qubits operating above 4K. We achieve fast electrical control of hole spins with driving frequencies up to 150MHz, single-qubit gate fidelities at the fault-tolerance threshold, and a Rabi oscillation quality factor greater than 87. Our devices feature both industry compatibility and quality, and are fabricated in a flexible and agile way that should accelerate further development.

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