Depinning of the Charge-Density Waves in Quasi-2D 1T-TaS2 Devices Operating at Room Temperature

• URL: http://arxiv.org/abs/2104.14051v1
• Date: Thu, 29 Apr 2021 00:17:19 GMT
• Title: Depinning of the Charge-Density Waves in Quasi-2D 1T-TaS2 Devices Operating at Room Temperature
• Authors: A. Mohammadzadeh, A. Rehman, F. Kargar, S. Rumyantsev, J. M. Smulko, W. Knap, R. K. Lake and A.A. Balandin
• Abstract summary: We report on depinning of nearly-commensurate charge-density waves in 1T-TaS2 thin-films at room temperature. The depinning process in 1T-TaS2 is not accompanied by an observable abrupt increase in electric current.
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• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: We report on depinning of nearly-commensurate charge-density waves in 1T-TaS2 thin-films at room temperature. A combination of the differential current-voltage measurements with the low-frequency noise spectroscopy provide unambiguous means for detecting the depinning threshold field in quasi-2D materials. The depinning process in 1T-TaS2 is not accompanied by an observable abrupt increase in electric current - in striking contrast to depinning in the conventional charge-density-wave materials with quasi-1D crystal structure. We explained it by the fact that the current density from the charge-density waves in the 1T-TaS2 devices is orders of magnitude smaller than the current density of the free carriers available in the discommensuration network surrounding the commensurate charge-density-wave islands. The depinning fields in 1T-TaS2 thin-film devices are several orders of magnitude larger than those in quasi-1D van der Waals materials. Obtained results are important for the proposed applications of the charge-density-wave devices in electronics.

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