Non-magnetic Fractional Conductance in High Mobility InAs Quantum Point Contacts

• URL: http://arxiv.org/abs/2503.08476v1
• Date: Tue, 11 Mar 2025 14:23:40 GMT
• Title: Non-magnetic Fractional Conductance in High Mobility InAs Quantum Point Contacts
• Authors: I. Villar Rodriguez, Y. Gul, C. P. Dempsey, J. T. Dong, S. N. Holmes, C. J. Palmstrom, M. Pepper,
• Abstract summary: We report the magneto-electronic properties of high mobility InAs quantum point contacts grown on InP substrates.<n>The 1D conductance reaches a maximum value of 17 plateaus, quantized in units of 2e2/h, where e is the fundamental unit of charge and h is Planck's constant.
• Score: 0.0
• License: http://creativecommons.org/licenses/by-nc-nd/4.0/
• Abstract: In this letter, we report the magneto-electronic properties of high mobility InAs quantum point contacts grown on InP substrates. The 1D conductance reaches a maximum value of 17 plateaus, quantized in units of 2e^2/h, where e is the fundamental unit of charge and h is Planck's constant. The in-plane effective g-factor was estimated to be -10.9 +/- 1.5 for subband N = 1 and -10.8 +/- 1.6 for subband N = 2. Furthermore, a study of the non-magnetic fractional conductance states at 0.2 (e^2/h) and 0.1(e2/h is provided. While their origin remains under discussion, evidence suggests that they arise from strong electron-electron interactions and momentum-conserving backscattering between electrons in two distinct channels within the 1D region. This phenomenon may also be interpreted as an entanglement between the two channel directions facilitated by momentum-conserving backscattering.

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