A high-sensitivity charge sensor for silicon qubits above one kelvin
- URL: http://arxiv.org/abs/2103.06433v2
- Date: Tue, 8 Jun 2021 05:48:37 GMT
- Title: A high-sensitivity charge sensor for silicon qubits above one kelvin
- Authors: Jonathan Y. Huang, Wee Han Lim, Ross C. C. Leon, Chih Hwan Yang, Fay
E. Hudson, Christopher C. Escott, Andre Saraiva, Andrew S. Dzurak, Arne
Laucht
- Abstract summary: We exploit the tunneling between two quantised states in a double-island SET (DISET) to demonstrate a charge sensor with an improvement in signal-to-noise by an order of magnitude.
With minor additional hardware overheads, these sensors can be integrated into existing qubit architectures for high fidelity charge readout at few-kelvin temperatures.
- Score: 0.6464439696329373
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: Recent studies of silicon spin qubits at temperatures above 1 K are
encouraging demonstrations that the cooling requirements for solid-state
quantum computing can be considerably relaxed. However, qubit readout
mechanisms that rely on charge sensing with a single-island single-electron
transistor (SISET) quickly lose sensitivity due to thermal broadening of the
electron distribution in the reservoirs. Here we exploit the tunneling between
two quantised states in a double-island SET (DISET) to demonstrate a charge
sensor with an improvement in signal-to-noise by an order of magnitude compared
to a standard SISET, and a single-shot charge readout fidelity above 99 % up to
8 K at a bandwidth > 100 kHz. These improvements are consistent with our
theoretical modelling of the temperature-dependent current transport for both
types of SETs. With minor additional hardware overheads, these sensors can be
integrated into existing qubit architectures for high fidelity charge readout
at few-kelvin temperatures.
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