Cryogenic characterization and modeling of a CMOS floating-gate device for quantum control hardware

• URL: http://arxiv.org/abs/2110.02315v1
• Date: Tue, 5 Oct 2021 19:31:42 GMT
• Title: Cryogenic characterization and modeling of a CMOS floating-gate device for quantum control hardware
• Authors: Michele Castriotta, Enrico Prati, Giorgio Ferrari
• Abstract summary: We perform the characterization and modeling of a floating-gate device realized with a commercial 350-nm CMOS technology at cryogenic temperature. The device stores onto a floating-gate node a non-volatile charge, which can be bidirectionally modified by Fowler-Nordheim tunneling and impact-ionized hotelectron injection.
• Score: 0.0
• License: http://creativecommons.org/licenses/by-nc-nd/4.0/
• Abstract: We perform the characterization and modeling of a floating-gate device realized with a commercial 350-nm CMOS technology at cryogenic temperature. The programmability of the device offers a solution in the realization of a precise and flexible cryogenic system for qubits control in large-scale quantum computers. The device stores onto a floating-gate node a non-volatile charge, which can be bidirectionally modified by Fowler-Nordheim tunneling and impact-ionized hotelectron injection. These two injection mechanisms are characterized and modeled in compact equations both at 300 K and 15 K. At cryogenic temperature, we show a fine-tuning of the stored charge compatible with the operation of a precise analog memory. Moreover, we developed accurate simulation models of the proposed floating-gate device that set the stage for designing a programmable analog circuit with better performances and accuracy at a few Kelvin. This work offers a solution in the design of configurable analog electronics to be employed for accurately read out the qubit state at deep-cryogenic temperature.

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