Automated tuning and characterization of a single-electron transistor charge sensor

• URL: http://arxiv.org/abs/2502.02521v1
• Date: Tue, 04 Feb 2025 17:45:00 GMT
• Title: Automated tuning and characterization of a single-electron transistor charge sensor
• Authors: Andrija Paurevic, Ali Sakr, Tanmay Joshi, Dennis van der Bovenkamp, Quim T. Nicolau, Floris A. Zwanenburg, Jonathan Baugh,
• Abstract summary: We present an automated protocol for tuning single-electron transistors (SETs) or single-hole transistors (SHTs) to operate as precise charge sensors. Using minimal device-specific information, the protocol performs measurements to enable the selection and ranking of high-sensitivity operating points.
• Score: 0.2094057281590807
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• Abstract: We present an automated protocol for tuning single-electron transistors (SETs) or single-hole transistors (SHTs) to operate as precise charge sensors. Using minimal device-specific information, the protocol performs measurements to enable the selection and ranking of high-sensitivity operating points. It also characterizes key device parameters, such as dot radius and gate lever arms, through acquisition and analysis of Coulomb diamonds. Demonstration on an accumulation-mode silicon SET at 1.5 K highlights its potential in the 1-2 K range for "hot" spin qubits in scalable quantum computing systems. This approach significantly reduces the tuning time compared to manual methods, with future improvements aimed at faster runtimes and dynamic feedback for robustness to charge fluctuations.

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