Dual-Gate GaAs-Nanowire FET for Room Temperature Charge-Qubit Operation: A NEGF Approach

• URL: http://arxiv.org/abs/2111.01548v2
• Date: Sat, 28 Jan 2023 10:41:24 GMT
• Title: Dual-Gate GaAs-Nanowire FET for Room Temperature Charge-Qubit Operation: A NEGF Approach
• Authors: Basudev Nag Chowdhury and Sanatan Chattopadhyay
• Abstract summary: This work investigates the performance of dual-gate GaAs-nanowire FET as a charge-qubit device operating at room temperature. Two voltage tunable quantum dots are created within the nanowire channel with electrostatically controlled single-state-occupancy and inter-dot coupling. A 25 MHz frequency of coherent oscillation is observed for the qubit and a characteristic decay time of 70 ns is achieved.
• Score: 0.0
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: The current work investigates the performance of dual-gate GaAs-nanowire FET as a charge-qubit device operating at room temperature. In compatibility with the state-of-the-art classical bit technology, it is shown that the single gate of a nanowire FET can be replaced by two localized gates to achieve such charge-qubit operation. On application of relevant biases to the localized gates, two voltage tunable quantum dots are created within the nanowire channel with electrostatically controlled single-state-occupancy and inter-dot coupling leading to charge-qubit operation at room temperature. The associated electron transport is theoretically modeled on the basis of non-equilibrium Green s function (NEGF) formalism. The initialization and manipulation for qubit operation are performed by applying suitable gate voltages, whereas the measurement is executed by applying a small drain bias to obtain a pulse current of ~pA order. A ~25 MHz frequency of coherent oscillation is observed for the qubit and a characteristic decay time of ~ 70 ns is achieved. The results suggest that such dual gate nanowire FET is a promising architecture for charge-qubit operation at room temperature.

Related papers

• Characterizing losses in InAs two-dimensional electron gas-based gatemon qubits [4.597795956436758]
  We present continuous-wave and time-domain characterization of gatemon qubits and coplanar waveguide resonators based on an InAs two-dimensional electron gas. We show that the qubit undergoes a vacuum Rabi splitting with a readout cavity and we drive coherent Rabi oscillations between the qubit ground and first excited states. We detail the loss mechanisms present in these materials through a systematic study of the quality factors of coplanar waveguide resonators.
  arXiv  Detail & Related papers  (2023-09-29T14:23:28Z)
• Large-scale on-chip integration of gate-voltage addressable hybrid superconductor-semiconductor quantum wells field effect nano-switch arrays [4.956039994321721]
  Hybrid superconductor-semiconductor (S-Sm) junctions and switches are key circuit elements and building blocks of gate-based quantum processors. Here, we experimentally demonstrate a novel realisation of large-scale scalable, and gate voltage controllable hybrid field effect quantum chips.
  arXiv  Detail & Related papers  (2023-07-10T05:44:43Z)
• Discriminating the Phase of a Coherent Tone with a Flux-Switchable Superconducting Circuit [50.591267188664666]
  We propose a new phase detection technique based on a flux-switchable superconducting circuit. The Josephson digital phase detector (JDPD) is capable of discriminating between two phase values of a coherent input tone.
  arXiv  Detail & Related papers  (2023-06-20T08:09:37Z)
• Design aspects of dual gate GaAs nanowire FET for room temperature charge qubit operation: A study on diameter and gate engineering [0.0]
  The study shows that the Bloch sphere coverage can be discretized along polar and azimuthal directions by reducing the nanowire diameter and increasing the inter-dot separation respectively. The proposed GaAs VTQD-based qubit may be significantly improved by scaling down both the nanowire diameter and gate separation.
  arXiv  Detail & Related papers  (2023-04-20T11:03:19Z)
• Tunable Capacitor For Superconducting Qubits Using an InAs/InGaAs Heterostructure [0.0]
  Development of low loss, high contrast couplers is critical for scaling up superconducting qubits. We present a blueprint for a gate-tunable coupler realized with a two-dimensional electron gas in an InAs/InGaAs heterostructure.
  arXiv  Detail & Related papers  (2022-12-08T23:10:55Z)
• Enhancing the Coherence of Superconducting Quantum Bits with Electric Fields [62.997667081978825]
  We show that qubit coherence can be improved by tuning defects away from the qubit resonance using an applied DC-electric field. We also discuss how local gate electrodes can be implemented in superconducting quantum processors to enable simultaneous in-situ coherence optimization of individual qubits.
  arXiv  Detail & Related papers  (2022-08-02T16:18:30Z)
• Coupling two charge qubits via a superconducting resonator operating in the resonant and dispersive regimes [5.526775342940154]
  We describe a new type of charge qubit formed by an electron confined in a triple-quantum-dot system. We present the form for the long-range dipolar coupling between the charge qubit and a superconducting resonator. We find that the fidelity for the iSWAP gate can reach fidelity higher than 99% for the noise level typical in experiments.
  arXiv  Detail & Related papers  (2020-12-28T07:49:41Z)
• Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device [48.7576911714538]
  Silicon nanoelectronic devices can host single-qubit quantum logic operations with fidelity better than 99.9%. For the spins of an electron bound to a single donor atom, introduced in the silicon by ion implantation, the quantum information can be stored for nearly 1 second. Here we demonstrate the conditional, coherent control of an electron spin qubit in an exchange-coupled pair of $31$P donors implanted in silicon.
  arXiv  Detail & Related papers  (2020-06-08T11:25:16Z)
• Universal non-adiabatic control of small-gap superconducting qubits [47.187609203210705]
  We introduce a superconducting composite qubit formed from two capacitively coupled transmon qubits. We control this low-frequency CQB using solely baseband pulses, non-adiabatic transitions, and coherent Landau-Zener interference. This work demonstrates that universal non-adiabatic control of low-frequency qubits is feasible using solely baseband pulses.
  arXiv  Detail & Related papers  (2020-03-29T22:48:34Z)
• Entanglement generation via power-of-SWAP operations between dynamic electron-spin qubits [62.997667081978825]
  Surface acoustic waves (SAWs) can create moving quantum dots in piezoelectric materials. We show how electron-spin qubits located on dynamic quantum dots can be entangled.
  arXiv  Detail & Related papers  (2020-01-15T19:00:01Z)
• Thermal coupling and effect of subharmonic synchronization in a system of two VO2 based oscillators [55.41644538483948]
  We explore a prototype of an oscillatory neural network (ONN) based on vanadium dioxide switching devices. The effective action radius RTC of coupling depends both on the total energy released during switching and on the average power. In the case of a strong thermal coupling, the limit of the supply current parameters, for which the oscillations exist, expands by 10 %. The effect of subharmonic synchronization hold promise for application in classification and pattern recognition.
  arXiv  Detail & Related papers  (2020-01-06T03:26:53Z)

This list is automatically generated from the titles and abstracts of the papers in this site.

This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.