Photoluminescence imaging of single photon emitters within nanoscale strain profiles in monolayer WSe$_2$

• URL: http://arxiv.org/abs/2301.09478v1
• Date: Mon, 23 Jan 2023 15:21:28 GMT
• Title: Photoluminescence imaging of single photon emitters within nanoscale strain profiles in monolayer WSe$_2$
• Authors: Artem N. Abramov, Igor Y. Chestnov, Ekaterina S. Alimova, Tatiana Ivanova, Ivan S. Mukhin, Dmitry N. Krizhanovskii, Ivan A. Shelykh, Ivan V. Iorsh and Vasily Kravtsov
• Abstract summary: Local deformation of van der Waals materials provides a powerful approach to create chip-compatible single-photon emitters (SPEs) Here we investigate SPEs with single-photon purity up to 98% created in monolayer WSe$indentation. Using photoluminescence imaging in combination with atomic force microscopy, we locate single-photon emitting sites on a deep sub-wavelength spatial scale.
• Score: 0.0
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Local deformation of atomically thin van der Waals materials provides a powerful approach to create site-controlled chip-compatible single-photon emitters (SPEs). However, the microscopic mechanisms underlying the formation of such strain-induced SPEs are still not fully clear, which hinders further efforts in their deterministic integration with nanophotonic structures for developing practical on-chip sources of quantum light. Here we investigate SPEs with single-photon purity up to 98% created in monolayer WSe$_2$ via nanoindentation. Using photoluminescence imaging in combination with atomic force microscopy, we locate single-photon emitting sites on a deep sub-wavelength spatial scale and reconstruct the details of the surrounding local strain potential. The obtained results suggest that the origin of the observed single-photon emission is likely related to strain-induced spectral shift of dark excitonic states and their hybridization with localized states of individual defects.

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