Cavity-enhanced single artificial atoms in silicon
- URL: http://arxiv.org/abs/2302.10230v1
- Date: Mon, 20 Feb 2023 19:05:04 GMT
- Title: Cavity-enhanced single artificial atoms in silicon
- Authors: Valeria Saggio, Carlos Errando-Herranz, Samuel Gyger, Christopher
Panuski, Mihika Prabhu, Lorenzo De Santis, Ian Christen, Dalia
Ornelas-Huerta, Hamza Raniwala, Connor Gerlach, Marco Colangelo, Dirk Englund
- Abstract summary: We show controllable cavity-coupling of single G-centers in the telecommunications O-band.
Results illustrate the potential to achieve a deterministic spin-photon interface in silicon at telecommunication wavelengths.
- Score: 0.0
- License: http://creativecommons.org/licenses/by/4.0/
- Abstract: Artificial atoms in solids are leading candidates for quantum networks,
scalable quantum computing, and sensing, as they combine long-lived spins with
mobile and robust photonic qubits. The central requirements for the spin-photon
interface at the heart of these systems are long spin coherence times and
efficient spin-photon coupling at telecommunication wavelengths. Artificial
atoms in silicon have a unique potential to combine the long coherence times of
spins in silicon with telecommunication wavelength photons in the world's most
advanced microelectronics and photonics platform. However, a current bottleneck
is the naturally weak emission rate of artificial atoms. An open challenge is
to enhance this interaction via coupling to an optical cavity. Here, we
demonstrate cavity-enhanced single artificial atoms at telecommunication
wavelengths in silicon. We optimize photonic crystal cavities via inverse
design and show controllable cavity-coupling of single G-centers in the
telecommunications O-band. Our results illustrate the potential to achieve a
deterministic spin-photon interface in silicon at telecommunication
wavelengths, paving the way for scalable quantum information processing.
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