Manipulating the Charge State of Spin Defects in Hexagonal Boron Nitride
- URL: http://arxiv.org/abs/2305.05866v1
- Date: Wed, 10 May 2023 03:18:05 GMT
- Title: Manipulating the Charge State of Spin Defects in Hexagonal Boron Nitride
- Authors: Angus Gale, Dominic Scognamiglio, Ivan Zhigulin, Benjamin Whitefield,
Mehran Kianinia, Igor Aharonovich and Milos Toth
- Abstract summary: Negatively charged boron vacancies ($smallV_B-$) in hexagonal boron nitride (hBN) have recently gained interest as spin defects.
Here, we investigate charge state switching of $smallV_B$ defects under laser and electron beam excitation.
- Score: 0.0
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: Negatively charged boron vacancies ($\small{V_B^-}$) in hexagonal boron
nitride (hBN) have recently gained interest as spin defects for quantum
information processing and quantum sensing by a layered material. However, the
boron vacancy can exist in a number of charge states in the hBN lattice, but
only the -1 state has spin-dependent photoluminescence and acts as a
spin-photon interface. Here, we investigate charge state switching of
$\small{V_B}$ defects under laser and electron beam excitation. We demonstrate
deterministic, reversible switching between the -1 and 0 states ($\small{V_B^-
\rightleftharpoons V_B^0 + e^-}$), occurring at rates controlled by excess
electrons or holes injected into hBN by a layered heterostructure device. Our
work provides a means to monitor and manipulate the $\small{V_B}$ charge state,
and to stabilize the -1 state which is a prerequisite for optical spin
manipulation and readout of the defect.
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