An electrically-driven Carbon nanotube-based plasmonic laser on Silicon

• URL: http://arxiv.org/abs/2305.09871v1
• Date: Wed, 17 May 2023 00:58:56 GMT
• Title: An electrically-driven Carbon nanotube-based plasmonic laser on Silicon
• Authors: Ke Liu, Behrouz Movahhed Nouri, Elham Heidari, Hamed Dalir and Volker J. Sorger
• Abstract summary: Photonic signal processing requires efficient on-chip light sources with higher modulation bandwidths. We show an electrically-driven Carbon nanotube (CNT)-based laser utilizing strong light-matter-interaction. Laser is formed by single-walled CNTs inside a combo-cavity consisting of both a plasmonic metal-oxide-semiconductor hybrid mode.
• Score: 2.229250780128436
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: Photonic signal processing requires efficient on-chip light sources with higher modulation bandwidths. Todays conventional fastest semiconductor diode lasers exhibit modulation speeds only on the order of a few tens of GHz due to gain compression effects and parasitic electrical capacitances. Here we theoretically show an electrically-driven Carbon nanotube (CNT)-based laser utilizing strong light-matter-interaction via monolithic integration into Silicon photonic crystal nanobeam (PCNB) cavities. The laser is formed by single-walled CNTs inside a combo-cavity consisting of both a plasmonic metal-oxide-semiconductor hybrid mode embedded in the one dimensional PCNB cavity. The emission originates from interband recombinations of electrostatically-doped nanotubes depending on the tubes chirality towards matching the C-band. Our simulation results show that the laser operates at telecom frequencies resulting in a power output > 3 (100) uW and > 100 (1000)GHz modulation speed at 1x (10x) threshold. Such monolithic integration schemes provide an alternative promising approach for light source in future photonics integrated circuits.

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