Graphene-Enhanced Single Ion Detectors for Deterministic Near-Surface Dopant Implantation in Diamond

• URL: http://arxiv.org/abs/2306.07496v2
• Date: Wed, 14 Jun 2023 06:50:10 GMT
• Title: Graphene-Enhanced Single Ion Detectors for Deterministic Near-Surface Dopant Implantation in Diamond
• Authors: Nicholas F. L. Collins, Alexander M. Jakob, Simon G. Robson, Shao Qi Lim, Paul R\"acke, Brett C. Johnson, Boqing Liu, Yuerui Lu, Daniel Spemann, Jeffrey C. McCallum, David N. Jamieson
• Abstract summary: Most demanding application for a large-scale quantum computer will require ordered arrays. By configuring an electronic-grade diamond substrate with a biased surface graphene electrode connected to charge-sensitive electronics, it is possible to demonstrate single ion implantation for ions stopping between 30 and 130nm deep from a typical ion source. This allows the construction of ordered arrays of single atoms with associated colour centres that paves the way for the fabrication of deterministic colour center networks in a monolithic device.
• Score: 45.887393876309375
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Colour centre ensembles in diamond have been the subject of intensive investigation for many applications including single photon sources for quantum communication, quantum computation with optical inputs and outputs, and magnetic field sensing down to the nanoscale. Some of these applications are realised with a single centre or randomly distributed ensembles in chips, but the most demanding application for a large-scale quantum computer will require ordered arrays. By configuring an electronic-grade diamond substrate with a biased surface graphene electrode connected to charge-sensitive electronics, it is possible to demonstrate deterministic single ion implantation for ions stopping between 30 and 130~nm deep from a typical stochastic ion source. An implantation event is signalled by a charge pulse induced by the drift of electron-hole pairs from the ion implantation. The ion implantation site is localised with an AFM nanostencil or a focused ion beam. This allows the construction of ordered arrays of single atoms with associated colour centres that paves the way for the fabrication of deterministic colour center networks in a monolithic device.

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