Probing negative differential resistance in silicon with a P-I-N diode-integrated T center ensemble

• URL: http://arxiv.org/abs/2501.11888v1
• Date: Tue, 21 Jan 2025 04:54:30 GMT
• Title: Probing negative differential resistance in silicon with a P-I-N diode-integrated T center ensemble
• Authors: Aaron M. Day, Chaoshen Zhang, Chang Jin, Hanbin Song, Madison Sutula, Alp Sipahigil, Mihir K. Bhaskar, Evelyn L. Hu,
• Abstract summary: The T center in silicon has emerged as a promising candidate for scalable quantum technologies. We present the first study of T-centers in an electrical device.
• Score: 0.6775616141339018
• License:
• Abstract: The T center in silicon has recently emerged as a promising candidate for scalable quantum technologies, due to its telecommunications band optical transition and microwave addressable ground state spin. The immense promise of the T center is driven by its silicon host material; silicon is by far the most mature, manufacturable semiconductor material for integrated photonic and electronic devices. Here, we present the first study of T-centers in an electrical device. We study an ensemble of T centers coupled to a buried lateral P-I-N diode in silicon, observing the T-center's optical response to static and dynamic electric fields. We utilize the defect's optical response as a probe of device nonlinearity, observing a phase transition of the carrier density into a stable oscillatory regime characteristic of negative differential resistance. These findings provide fundamental insight into the physics of the T-center for improved quantum device performance and open a promising new direction for defect-based local quantum sensing in semiconductor devices.

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