Related papers: High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells

High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells

URL: http://arxiv.org/abs/2405.14138v1
Date: Thu, 23 May 2024 03:22:33 GMT
Title: High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells
Authors: E. Annelise Bergeron, F. Sfigakis, A. Elbaroudy, A. W. M. Jordan, F. Thompson, George Nichols, Y. Shi, Man Chun Tam, Z. R. Wasilewski, J. Baugh,
Abstract summary: We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in 24 nm wide indium arsenide surface quantum wells. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are observed. Proximitized superconductivity is demonstrated in Nb-based superconductor-normal-superconductor (SNS) junctions.
Score: 0.0
License: http://creativecommons.org/licenses/by-nc-nd/4.0/
Abstract: We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in 24 nm wide indium arsenide surface quantum wells. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are observed to filling factor $\nu=2$ in magnetic fields of up to B = 18 T, at electron densities up to 8$\times 10^{11}$ /cm$^2$. Peak mobility is 11,000 cm$^2$/Vs at 2$\times 10^{12}$ /cm$^2$. Large Rashba spin-orbit coefficients up to 124 meV$\cdot$\r{A} are obtained through weak anti-localization (WAL) measurements. Proximitized superconductivity is demonstrated in Nb-based superconductor-normal-superconductor (SNS) junctions, yielding 78$-$99% interface transparencies from superconducting contacts fabricated ex-situ (post-growth), using two commonly-used experimental techniques for measuring transparencies. These transparencies are on a par with those reported for epitaxially-grown superconductors. These SNS junctions show characteristic voltages $I_c R_{\text{N}}$ up to 870 $\mu$V and critical current densities up to 9.6 $\mu$A/$\mu$m, among the largest values reported for Nb-InAs SNS devices.

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