Extended spin relaxation times of optically addressed telecom defects in silicon carbide
- URL: http://arxiv.org/abs/2405.16303v1
- Date: Sat, 25 May 2024 16:55:53 GMT
- Title: Extended spin relaxation times of optically addressed telecom defects in silicon carbide
- Authors: Jonghoon Ahn, Christina Wicker, Nolan Bitner, Michael T. Solomon, Benedikt Tissot, Guido Burkard, Alan M. Dibos, Jiefei Zhang, F. Joseph Heremans, David D. Awschalom,
- Abstract summary: We employ vanadium (V4+) in silicon carbide (SiC) to establish a potential telecom spin-photon interface within a mature semiconductor host.
With this technique, we lower the temperature from about 2K to 100 mK to observe a remarkable four-orders-of-magnitude increase in spin T1 from all measured sites.
We identify the underlying relaxation mechanisms, which involve a two-phonon Orbach process, indicating the opportunity for strain-tuning to enable qubit operation at higher temperatures.
- Score: 0.0
- License: http://creativecommons.org/licenses/by/4.0/
- Abstract: Optically interfaced solid-state defects are promising candidates for quantum communication technologies. The ideal defect system would feature bright telecom emission, long-lived spin states, and a scalable material platform, simultaneously. Here, we employ one such system, vanadium (V4+) in silicon carbide (SiC), to establish a potential telecom spin-photon interface within a mature semiconductor host. This demonstration of efficient optical spin polarization and readout facilitates all optical measurements of temperature-dependent spin relaxation times (T1). With this technique, we lower the temperature from about 2K to 100 mK to observe a remarkable four-orders-of-magnitude increase in spin T1 from all measured sites, with site-specific values ranging from 57 ms to above 27 s. Furthermore, we identify the underlying relaxation mechanisms, which involve a two-phonon Orbach process, indicating the opportunity for strain-tuning to enable qubit operation at higher temperatures. These results position V4+ in SiC as a prime candidate for scalable quantum nodes in future quantum networks.
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