Geometric two-qubit gates in silicon-based double quantum dots

• URL: http://arxiv.org/abs/2409.00601v1
• Date: Sun, 1 Sep 2024 03:39:22 GMT
• Title: Geometric two-qubit gates in silicon-based double quantum dots
• Authors: Yong-Yang Lu, Kejin Wei, Chengxian Zhang,
• Abstract summary: We propose strategy to implement geometric two-qubit gates for silicon-based spin qubits. It is found that the implemented geometric gates can obtain fidelities surpassing 99% for the noise level related to the experiments.
• Score: 0.0
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Achieving high-fidelity two-qubit gates is crucial for spin qubits in silicon double quantum dots. However, the two-qubit gates in experiments are easily suffered from charge noise, which is still a key challenge. Geometric gates which implement gate operations employing pure geometric phase are believed to be a powerful way to realize robust control. In this work, we theoretically propose feasible strategy to implement geometric two-qubit gates for silicon-based spin qubits considering experimental control environments. By working in the suitable region where the local magnetic field gradient is much larger than the exchange interaction, we are able to implement entangling and non-entangling geometric gates via analytical and numerical methods. It is found that the implemented geometric gates can obtain fidelities surpassing 99\% for the noise level related to the experiments. Also, they can outperform the dynamical opertations. Our work paves a way to implement high-fidelity geometric gate for spin qubits in silicon.

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