Roadmap on Atomic-scale Semiconductor Devices

• URL: http://arxiv.org/abs/2501.04535v2
• Date: Wed, 22 Jan 2025 11:48:53 GMT
• Title: Roadmap on Atomic-scale Semiconductor Devices
• Authors: Steven R. Schofield, Andrew J. Fisher, Eran Ginossar, Joseph W. Lyding, Richard Silver, Fan Fei, Pradeep Namboodiri, Jonathan Wyrick, M. G. Masteghin, D. C. Cox, B. N. Murdin, S. K Clowes, Joris G. Keizer, Michelle Y. Simmons, Holly G. Stemp, Andrea Morello, Benoit Voisin, Sven Rogge, Robert A. Wolkow, Lucian Livadaru, Jason Pitters, Taylor J. Z. Stock, Neil J. Curson, Robert E. Butera, Tatiana V. Pavlova, A. M. Jakob, D. Spemann, P. Räcke, F. Schmidt-Kaler, D. N. Jamieson, Utkarsh Pratiush, Gerd Duscher, Sergei V. Kalinin, Dimitrios Kazazis, Procopios Constantinou, Gabriel Aeppli, Yasin Ekinci, James H. G. Owen, Emma Fowler, S. O. Reza Moheimani, John N. Randall, Shashank Misra, Jeffrey Ivie, Christopher R. Allemang, Evan M. Anderson, Ezra Bussmann, Quinn Campbell, Xujiao Gao, Tzu-Ming Lu, Scott W. Schmucker,
• Abstract summary: Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits. The proposal to use nuclear and electronic spins of donor atoms in silicon was introduced by Kane in 1998. This article reviews the advancements in the 25 years since Kane's proposal.
• Score: 1.479299092942778
• License:
• Abstract: Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing technologies. The proposal to use nuclear and electronic spins of donor atoms in silicon, introduced by Kane in 1998, sparked a new research field focused on the precise positioning of individual impurity atoms for quantum devices, utilising scanning tunnelling microscopy and ion implantation. This roadmap article reviews the advancements in the 25 years since Kane's proposal, the current challenges, and the future directions in atomic-scale semiconductor device fabrication and measurement. It covers the quest to create a silicon-based quantum computer and expands to include diverse material systems and fabrication techniques, highlighting the potential for a broad range of semiconductor quantum technological applications. Key developments include phosphorus in silicon devices such as single-atom transistors, arrayed few-donor devices, one- and two-qubit gates, three-dimensional architectures, and the development of a toolbox for future quantum integrated circuits. The roadmap also explores new impurity species like arsenic and antimony for enhanced scalability and higher-dimensional spin systems, new chemistry for dopant precursors and lithographic resists, and the potential for germanium-based devices. Emerging methods, such as photon-based lithography and electron beam manipulation, are discussed for their disruptive potential. This roadmap charts the path toward scalable quantum computing and advanced semiconductor quantum technologies, emphasising the critical intersections of experiment, technological development, and theory.

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