Trapping potentials and quantum gates for microwave-dressed Rydberg atoms on an atom chip

• URL: http://arxiv.org/abs/2504.10349v1
• Date: Mon, 14 Apr 2025 15:59:35 GMT
• Title: Trapping potentials and quantum gates for microwave-dressed Rydberg atoms on an atom chip
• Authors: Iason Tsiamis, Georgios Doultsinos, Manuel Kaiser, Dominik Jakab, Andreas Günther, József Fortágh, David Petrosyan,
• Abstract summary: Rydberg atoms in static electric fields possess permanent dipole moments.<n>We show that by applying a bias electric field and coupling a desired Rydberg state by a microwave field of proper frequency, we can create a trapping potential for the atom.<n>A pair of such trapped Rydberg states of an atom can represent a qubit.
• Score: 0.0
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Rydberg atoms in static electric fields possess permanent dipole moments. When the atoms are close to a surface producing an inhomogeneous electric field, such as by the adsorbates on an atom chip, depending on the sign of the dipole moment of the Rydberg-Stark eigenstate, the atoms may experience a force towards or away from the surface. We show that by applying a bias electric field and coupling a desired Rydberg state by a microwave field of proper frequency to another Rydberg state with opposite sign of the dipole moment, we can create a trapping potential for the atom at a prescribed distance from the surface. Perfectly overlapping trapping potentials for several Rydberg states can also be created by multi-component microwave fields. A pair of such trapped Rydberg states of an atom can represent a qubit. Finally, we discuss an optimal realization of the swap gate between pairs of such atomic Rydberg qubits separated by a large distance but interacting with a common mode of a planar microwave resonator at finite temperature.

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