Strong electron-electron interactions in a dilute weakly-localized metal near a metal-to-insulator transition

• URL: http://arxiv.org/abs/2508.02793v1
• Date: Mon, 04 Aug 2025 18:04:55 GMT
• Title: Strong electron-electron interactions in a dilute weakly-localized metal near a metal-to-insulator transition
• Authors: Nicolò D'Anna, Jamie Bragg, Aidan G. McConnell, Procopios C. Constantinou, Juerong Li, Taylor J. Z. Stock, Steven R. Schofield, Neil J. Curson, Y. Soh, Marek Bartkowiak, Simon Gerber, Markus Müller, Guy Matmon, Gabriel Aeppli,
• Abstract summary: We take advantage of advances in creating ultra-thin layers of Bohr-atom-like dopants to realize the two-dimensional disordered Hubbard model at half-filling.<n>We use gas-phase dosing of dopant precursor molecules on silicon to create arsenic and phosphorus $delta$-layers as thin as 0.4nm and as dilute as 10$13$cm$-2$.
• Score: 0.9142469437777284
• License: http://creativecommons.org/licenses/by-nc-nd/4.0/
• Abstract: Because it is easily switched from insulator to metal either via chemical doping or electrical gating, silicon is at the core of modern information technology and remains a candidate platform for quantum computing. The metal-to-insulator transition in this material has therefore been one of the most studied phenomena in condensed matter physics, and has been revisited with considerable profit each time a new fabrication technology has been introduced. Here we take advantage of recent advances in creating ultra-thin layers of Bohr-atom-like dopants to realize the two-dimensional disordered Hubbard model at half-filling and its metal-to-insulator transition (MIT) as a function of mean distance between atoms. We use gas-phase dosing of dopant precursor molecules on silicon to create arsenic and phosphorus $\delta$-layers as thin as 0.4~nm and as dilute as 10$^{13}$~cm$^{-2}$. On approaching the insulating state, the conventional weak localization effects, prevalent at high dopant densities and due to orbital motion of the electrons in the plane, become dominated by electron-electron interaction contributions which obey a paramagnetic Zeeman scaling law. The latter make a negative contribution to the conductance, and thus cannot be interpreted in terms of an emergent Kondo regime near the MIT.

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