Spectral tuning of single T centres by the Stark effect

• URL: http://arxiv.org/abs/2604.25170v1
• Date: Tue, 28 Apr 2026 03:19:24 GMT
• Title: Spectral tuning of single T centres by the Stark effect
• Abstract summary: Single T centres are integrated into silicon nanophotonic cavities with p-i-n diodes for local electronic control.<n>These devices enable Stark tuning up to 30 GHz, sufficient to bring 55(2)% of on-chip T centres into mutual resonance.<n>Localized and individual spectral tuning increases the yield of performant silicon spin-photon interfaces.
• Score: 3.836753323934017
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Among the many solid-state emitters being explored for scalable quantum technologies, the silicon T centre is a leading candidate offering long-lived spin qubits, a telecommunications-band spin-photon interface, and integration with on-chip photonic circuits. However, nanophotonic integration broadens both the inhomogeneous spectral distribution and individual emitter linewidths. Here, we integrate single T centres into silicon nanophotonic cavities with p-i-n diodes for local electronic control. These devices enable Stark tuning up to 30 GHz, sufficient to bring 55(2)% of on-chip T centres into mutual resonance, and demonstrate tunable lifetime reduction across the cavity resonance. A model of the joint excitation probability shows an orders-of-magnitude increase in entanglement rate by tuning distinct emitters into mutual resonance. Luminescence modulation at high reverse biases reveals a transition to a dark charge state. Finally, bias-induced modulation of the optical transition splitting uncovers a potential mechanism for electrically driven excited-state spin mixing via spin-orbit coupling. Localized and individual spectral tuning increases the yield of performant silicon spin-photon interfaces and the number of devices per chip available for large-scale entanglement and quantum information technologies.

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