Seeing the forbidden: overcoming optical selection rules through nanophotonic integration

• URL: http://arxiv.org/abs/2605.04277v1
• Date: Tue, 05 May 2026 20:30:02 GMT
• Title: Seeing the forbidden: overcoming optical selection rules through nanophotonic integration
• Abstract summary: Integrating spin defects into photonic structures such as nanopillars improves photon collection efficiency.<n>We show that the sub-wavelength geometry of nanopillars drastically modifies the local electromagnetic environment.<n>We also leverage the orientation-dependent collection of nanopillars to resolve the origin of previously ambiguous spectral lines.
• Score: 0.0
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Optically addressable spin defects in silicon carbide, including the neutral divacancy (VV$^0$) and the negative nitrogen-vacancy (NV$^-$), are among leading building blocks of solid-state quantum technologies. Integrating these defects into photonic structures such as nanopillars improves photon collection efficiency, but the consequences extend further. We show that the sub-wavelength geometry of nanopillars drastically modifies the local electromagnetic environment, providing optical access to defect transitions that are otherwise suppressed by selection rules in bulk material. Using low-temperature photoluminescence spectroscopy, we observe that emission from the PL3 divacancy, which is nearly absent in planar devices, becomes pronounced in nanopillars owing to a polarization transformation of the excitation field within the pillar. We further leverage the orientation-dependent collection of nanopillars to resolve the origin of previously ambiguous spectral lines. In particular, the NV4$'$ feature displays the signal enhancement expected for axially oriented NV$^-$ centres, consistent with assignment to a higher excited state of the $kh$ defect configuration. Our results establish nanophotonic integration as a symmetry-sensitive probe that can both activate nominally dark transitions and identify the dipole character of poorly understood defect states.

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