Insights into the Nature of Quantum Emitters in Electron-Irradiated hexagonal Boron Nitride
- URL: http://arxiv.org/abs/2605.12663v1
- Date: Tue, 12 May 2026 19:10:44 GMT
- Title: Insights into the Nature of Quantum Emitters in Electron-Irradiated hexagonal Boron Nitride
- Abstract summary: Quantum emitters in hexagonal boron nitride (hBN) have emerged as a promising solid-state platform for quantum technology applications.<n>This work provides a step-by-step framework to assess whether quantum emitters in electron-irradiated hBN are associated with organic contaminants introduced during sample preparation.
- Score: 55.84937696944516
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: Quantum emitters in hexagonal boron nitride (hBN) have emerged as a promising solid-state platform for quantum technology applications. However, a persistent challenge in the field is the unclear origin of many observed emission lines, particularly in the visible range, which can be difficult to distinguish from signals arising from organic or process-induced contamination during sample preparations and handling. This ambiguity limits both the reproducibility of emitter generation and the reliable identification of truly intrinsic quantum defects. This work provides a step-by-step framework to assess whether quantum emitters in electron-irradiated hBN are associated with organic contaminants introduced during sample preparation. We employ hyperspectral imaging, thermal annealing, and oxygen plasma etching to investigate the origin of the green-yellow emitters in electron-irradiated hBN. The combined results not only rule out organic contamination as the source of emission but also provide insight into the spectral variability, thermal stability, and vertical localization of the emitters generated in electron-irradiated hBN that was created without any pre- or post-processing. In addition, our experiments demonstrate the feasibility of creating stable emitters in hBN with thicknesses below 10 nm. These findings provide practical guidance for the identification and controlled implementation of hBN-based single-photon emitters in quantum photonic devices.
Related papers
- Decoherence of Quantum Emitters in hexagonal Boron Nitride [0.17413461132662073]
Coherent quantum emitters are a central resource for advanced quantum technologies.
Here, we demonstrate that hBN processes can degrade the coherence, and hence the functionality, of quantum emitters in hBN.
We highlight the critical importance of crystal lattice quality to achieving coherent quantum emitters in hBN.
arXiv Detail & Related papers (2024-10-22T04:25:35Z) - Deterministic Creation of Identical Monochromatic Quantum Emitters in Hexagonal Boron Nitride [0.856679809939242]
The authors report a deterministic creation of identical room temperature quantum emitters using masked-carbon-ion implantation on freestanding hBN flakes.
Quantum emitters fabricated by our approach showed thermally limited monochromaticity with an emission center wavelength distribution of 590.7 +- 2.7 nm.
Our method provides a reliable platform for characterization and fabrication research on hBN based quantum emitters, helping to reveal the origins of the single-photon-emission behavior in hBN.
arXiv Detail & Related papers (2024-10-17T02:52:01Z) - Site-Controlled Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride [62.170141783047974]
Single photon emitters hosted in hexagonal boron nitride (hBN) are essential building blocks for quantum photonic technologies that operate at room temperature.
We experimentally demonstrate large-area arrays of plasmonic nanoresonators for Purcell-induced site-controlled SPEs.
Our results offer arrays of bright, heterogeneously integrated quantum light sources, paving the way for robust and scalable quantum information systems.
arXiv Detail & Related papers (2024-05-03T23:02:30Z) - Comparative study of quantum emitter fabrication in wide bandgap
materials using localized electron irradiation [33.18585053467985]
Quantum light sources are crucial foundational components for various quantum technology applications.
With the rapid development of quantum technology, there has been a growing demand for materials with the capability of hosting quantum emitters.
One such material platform uses fluorescent defects in hexagonal boron nitride (hBN) that can host deep sublevels within the bandgap.
The localized electron irradiation has shown its effectiveness in generating deep sublevels to induce single emitters in hBN.
arXiv Detail & Related papers (2023-12-05T16:12:37Z) - Localized creation of yellow single photon emitting carbon complexes in
hexagonal boron nitride [27.965277627489417]
Single photon emitters in solid-state crystals have received a lot of attention as building blocks for numerous quantum technology applications.
Here, we demonstrate the localized fabrication of hBN emitter arrays by electron beam irradiation.
Our measurements of optically detected magnetic resonance have not revealed any addressable spin states.
arXiv Detail & Related papers (2022-08-29T10:44:12Z) - Single quantum emitters with spin ground states based on Cl bound
excitons in ZnSe [55.41644538483948]
We show a new type of single photon emitter with potential electron spin qubit based on Cl impurities inSe.
Results suggest single Cl impurities are suitable as single photon source with potential photonic interface.
arXiv Detail & Related papers (2022-03-11T04:29:21Z) - Deterministic fabrication of blue quantum emitters in hexagonal boron
nitride [3.261706723536935]
We present a robust, deterministic electron beam technique for site-specific fabrication of blue quantum emitters with a zero-phonon line at 436 nm (2.8 eV)
We show that the emission intensity is proportional to electron dose and that the efficacy of the fabrication method correlates with a defect emission at 305 nm (4.1 eV)
Our results provide important insights into photophysical properties and structure of defects in hBN and a framework for deterministic fabrication of quantum emitters in hBN.
arXiv Detail & Related papers (2021-11-26T11:51:12Z) - Phonon dephasing and spectral diffusion of quantum emitters in hexagonal
Boron Nitride [52.915502553459724]
Quantum emitters in hexagonal boron nitride (hBN) are emerging as bright and robust sources of single photons for applications in quantum optics.
We study phonon dephasing and spectral diffusion of quantum emitters in hBN via resonant excitation spectroscopy at cryogenic temperatures.
arXiv Detail & Related papers (2021-05-25T05:56:18Z) - Optical repumping of resonantly excited quantum emitters in hexagonal
boron nitride [52.77024349608834]
We present an optical co-excitation scheme which uses a weak non-resonant laser to reduce transitions to a dark state and amplify the photoluminescence from quantum emitters in hexagonal boron nitride (hBN)
Our results are important for the deployment of atom-like defects in hBN as reliable building blocks for quantum photonic applications.
arXiv Detail & Related papers (2020-09-11T10:15:22Z) - Mechanical Decoupling of Quantum Emitters in Hexagonal Boron Nitride
from Low-Energy Phonon Modes [52.77024349608834]
Quantum emitters in hexagonal Boron Nitride (hBN) were recently reported to hol a homogeneous linewidth according to the Fourier-Transform limit up to room temperature.
This unusual observation was traced back to decoupling from in-plane phonon modes which can arise if the emitter is located between two planes of the hBN host material.
arXiv Detail & Related papers (2020-04-22T20:00:49Z)
This list is automatically generated from the titles and abstracts of the papers in this site.
This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.