Quantum Emitters at Telecommunication Wavelengths based on Carbon Defects in Transition Metal Dichalcogenides

• URL: http://arxiv.org/abs/2605.18501v1
• Date: Mon, 18 May 2026 14:55:50 GMT
• Title: Quantum Emitters at Telecommunication Wavelengths based on Carbon Defects in Transition Metal Dichalcogenides
• Abstract summary: Low-dimensional materials have emerged as promising hosts for quantum emitters.<n>We study substitutional carbon defects at chalcogen sites (S and Se) in WS2, WSe2, MoS2, and MoSe2 bilayers.<n>Our findings establish carbon-doped TMD bilayers as promising platforms for room-temperature defect-based quantum emitters.
• Score: 0.06797079068199122
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Low-dimensional materials have emerged as promising hosts for quantum emitters, whose emission typically arises from either strain-induced band bending or defect-induced two-level systems. Among these materials, transition metal dichalcogenide (TMD) monolayers have attracted particular attention; however, their performance is limited by strong photoluminescence (PL) quenching at room temperature. As TMDs transition from a direct to an indirect bandgap when moving from monolayers to multilayers, we herein propose a strategy to overcome this quenching limitation by exploiting the indirect bandgap of TMD bilayers in combination with a point defect doping. The indirect gap suppresses excitonic PL, while specific defects enable robust defect-mediated quantum emission. Using hybrid-functional density functional theory, we investigate substitutional carbon defects at chalcogen sites (S and Se) in WS2, WSe2, MoS2, and MoSe2 bilayers and comprehensively characterize their optical properties. Both neutral and singly negative charge states are found to be thermodynamically stable. Neutral defects exhibit singlet configurations with emission in the O- and C-band telecommunication windows, whereas negatively charged defects adopt doublet configurations featuring spin-selective transitions and near-infrared emission. The electron-phonon coupling strength, radiative lifetime, and dipole orientation are found to depend sensitively on both the host material and defect site, providing distinct fingerprints for experimental identification. Our findings, therefore, establish carbon-doped TMD bilayers as promising platforms for room-temperature defect-based quantum emitters operating at telecommunication wavelengths.

Related papers

• Energy-Transfer-Enhanced Emission and Quantum Sensing of VB- Defects in hBN-PbI2 Heterostructures [31.458406135473805]
  Spin defects in two-dimensional materials hold significant potential for quantum information technologies and sensing applications.<n>This work establishes a proof-of-concept for amplifying weak defect signals in nanomaterials, highlighting a new strategy for engineering their optical and magnetic responses.
  arXiv  Detail & Related papers  (2026-02-02T16:01:45Z)
• Disorder-Engineered Hybrid Plasmonic Cavities for Emission Control of Defects in hBN [0.0]
  Defect-based quantum emitters in hexagonal boron nitride (hBN) are promising building blocks for scalable quantum photonics.<n>This study demonstrates a low-cost, fabrication approach to integrate plasmonic nanocavities with defect-based quantum emitters in hBN nanoflakes.
  arXiv  Detail & Related papers  (2025-06-17T13:46:15Z)
• First Sub-MeV Dark Matter Search with the QROCODILE Experiment Using Superconducting Nanowire Single-Photon Detectors [51.550188330599525]
  We present the first results from the Quantum Resolution-d Cryogenic Observatory for Dark matter Incident at Low Energy (QROCODILE)<n>The QROCODILE experiment uses a microwire-based superconducting nanowire single-photon detector (SNSPD) as a target and sensor for dark matter scattering and absorption.<n>We report new world-leading constraints on the interactions of sub-MeV dark matter particles with masses as low as 30 keV.
  arXiv  Detail & Related papers  (2024-12-20T19:00:00Z)
• Quantum Emission from Coupled Spin Pairs in Hexagonal Boron Nitride [4.1020458874018795]
  Optically addressable defect qubits in wide band gap materials are favorable candidates for room temperature quantum information processing. The two-dimensional hexagonal boron nitride (hBN) is an attractive solid state platform with a great potential for hosting bright quantum emitters with quantum memories.
  arXiv  Detail & Related papers  (2024-08-24T08:40:38Z)
• Site-Controlled Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride [62.170141783047974]
  Single photon emitters hosted in hexagonal boron nitride (hBN) are essential building blocks for quantum photonic technologies that operate at room temperature. We experimentally demonstrate large-area arrays of plasmonic nanoresonators for Purcell-induced site-controlled SPEs. Our results offer arrays of bright, heterogeneously integrated quantum light sources, paving the way for robust and scalable quantum information systems.
  arXiv  Detail & Related papers  (2024-05-03T23:02:30Z)
• Limits for coherent optical control of quantum emitters in layered materials [49.596352607801784]
  coherent control of a two-level system is among the most essential challenges in modern quantum optics. We use a mechanically isolated quantum emitter in hexagonal boron nitride to explore the individual mechanisms which affect the coherence of an optical transition under resonant drive. New insights on the underlying physical decoherence mechanisms reveals a limit in temperature until which coherent driving of the system is possible.
  arXiv  Detail & Related papers  (2023-12-18T10:37:06Z)
• Donor-Acceptor Pairs in Wide-Bandgap Semiconductors for Quantum Technology Applications [38.9306189220547]
  We investigate the electronic structure and interactions of donor-acceptor pairs (DAPs) formed by various point defects in diamond and silicon carbide (SiC) We show that polarization differences between ground and excited states lead to unusually large electric dipole moments for several DAPs in diamond and SiC. We predict radiative lifetimes and photoluminescence spectra for selected substitutional atoms and show that while B-N pairs in diamond are challenging to control due to their large electron-phonon coupling, DAPs in SiC, especially Al-N pairs, are suitable candidates to realize long-range optically controllable interactions
  arXiv  Detail & Related papers  (2023-05-09T22:45:13Z)
• Single quantum emitters with spin ground states based on Cl bound excitons in ZnSe [55.41644538483948]
  We show a new type of single photon emitter with potential electron spin qubit based on Cl impurities inSe. Results suggest single Cl impurities are suitable as single photon source with potential photonic interface.
  arXiv  Detail & Related papers  (2022-03-11T04:29:21Z)
• Review on coherent quantum emitters in hexagonal boron nitride [91.3755431537592]
  I discuss the state-of-the-art of defect centers in hexagonal boron nitride with a focus on optically coherent defect centers. The spectral transition linewidth remains unusually narrow even at room temperature. The field is put into a broad perspective with impact on quantum technology such as quantum optics, quantum photonics as well as spin optomechanics.
  arXiv  Detail & Related papers  (2022-01-31T12:49:43Z)
• Defect polaritons from first principles [0.0]
  We investigate three defect types -- CHB, CB-CB, and CB-VN -- in monolayer hexagonal boron nitride (hBN) For all defect systems, we show that the polaritonic splitting that shifts the absorption energy of the lower polariton is much higher than can be expected from a Jaynes-Cummings interaction. We find that initially localized electronic transition densities can become delocalized across the entire material under strong light-matter coupling.
  arXiv  Detail & Related papers  (2021-05-04T18:00:00Z)
• Quantum Sensors for Microscopic Tunneling Systems [58.720142291102135]
  tunneling Two-Level-Systems (TLS) are important for micro-fabricated quantum devices such as superconducting qubits. We present a method to characterize individual TLS in virtually arbitrary materials deposited as thin-films. Our approach opens avenues for quantum material spectroscopy to investigate the structure of tunneling defects.
  arXiv  Detail & Related papers  (2020-11-29T09:57:50Z)
• Dynamic modulation of phonon-assisted transitions in quantum defects in monolayer transition-metal dichalcogenide semiconductors [0.0]
  We study the effect of spin-orbit coupling on the electron-phonon interaction in a single chalcogen vacancy defect. We find that spin-orbit tune the magnitude of the electron-phonon coupling in both optical and charge-state transitions of the defect.
  arXiv  Detail & Related papers  (2020-07-28T18:00:00Z)

This list is automatically generated from the titles and abstracts of the papers in this site.

This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.