Epitaxial single T centres in silicon-on-insulator

• URL: http://arxiv.org/abs/2607.06272v1
• Date: Tue, 07 Jul 2026 13:37:46 GMT
• Title: Epitaxial single T centres in silicon-on-insulator
• Abstract summary: Spin-photon interfaces based on silicon quantum emitters offer a scalable platform for quantum computing and networking.<n>To overcome this, we utilise high-purity molecular-beam epitaxy (MBE) to epitaxially incorporate single T centres in silicon-on-insulator (SOI) wafers.<n>We demonstrate single T-centre emission coupled to a nanophotonic waveguide and observe significant suppression of homogeneous broadening.
• Score: 0.0
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: Spin-photon interfaces based on silicon quantum emitters offer a scalable platform for quantum computing and networking. However, achieving coherent photon emission remains a primary challenge due to stringent material quality requirements. To overcome this, we utilise high-purity molecular-beam epitaxy (MBE) to epitaxially incorporate single T centres in silicon-on-insulator (SOI) wafers. We demonstrate single T-centre emission coupled to a nanophotonic waveguide and observe significant suppression of homogeneous broadening, yielding optical linewidths as narrow as 30 MHz using natural silicon for crystal growth. These results establish epitaxial T centres as a robust foundation for coherent spin-photon interfaces in silicon quantum photonics.

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