How valley-orbit states in silicon quantum dots probe quantum well
interfaces
- URL: http://arxiv.org/abs/2103.14702v2
- Date: Wed, 6 Apr 2022 17:22:23 GMT
- Title: How valley-orbit states in silicon quantum dots probe quantum well
interfaces
- Authors: J. P. Dodson, H. Ekmel Ercan, J. Corrigan, Merritt Losert, Nathan
Holman, Thomas McJunkin, L. F. Edge, Mark Friesen, S. N. Coppersmith, M. A.
Eriksson
- Abstract summary: We report measurements of one- and two-electron valley-orbit state energies as the dot potential is modified by changing gate voltages.
The results enable an understanding of the interplay between the physical contributions and enable a new probe of the quantum well interface.
- Score: 0.0
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: The energies of valley-orbit states in silicon quantum dots are determined by
an as yet poorly understood interplay between interface roughness, orbital
confinement, and electron interactions. Here, we report measurements of one-
and two-electron valley-orbit state energies as the dot potential is modified
by changing gate voltages, and we calculate these same energies using full
configuration interaction calculations. The results enable an understanding of
the interplay between the physical contributions and enable a new probe of the
quantum well interface.
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