Optical Direct Write of Dolan--Niemeyer-Bridge Junctions for Transmon
Qubits
- URL: http://arxiv.org/abs/2106.09034v2
- Date: Mon, 9 Aug 2021 20:06:24 GMT
- Title: Optical Direct Write of Dolan--Niemeyer-Bridge Junctions for Transmon
Qubits
- Authors: J. T. Monroe, D. Kowsari, K. Zheng, C. Gaikwad, J. Brewster, D. S.
Wisbey, and K. W. Murch
- Abstract summary: We characterize highly coherent transmon qubits fabricated with a direct-write photolithography system.
We achieve energy relaxation times in excess of $80 mu$s for three dimensional transmon qubits with Josephson junction lithographic areas of 2 $mumathrmm2$.
- Score: 0.0
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: We characterize highly coherent transmon qubits fabricated with a
direct-write photolithography system. Multi-layer evaporation and oxidation
allows us to change the critical current density by reducing the effective
tunneling area and increasing the barrier thickness. Surface treatments before
resist application and again before evaporation result in high coherence
devices. With optimized surface treatments we achieve energy relaxation $T_1$
times in excess of $80\ \mu$s for three dimensional transmon qubits with
Josephson junction lithographic areas of 2 $\mu\mathrm{m}^2$.
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