High-throughput identification of spin-photon interfaces in silicon

• URL: http://arxiv.org/abs/2303.01594v1
• Date: Thu, 2 Mar 2023 21:35:17 GMT
• Title: High-throughput identification of spin-photon interfaces in silicon
• Authors: Yihuang Xiong and C\'eline Bourgois and Natalya Sheremetyeva and Wei Chen and Diana Dahliah and Hanbin Song and Sin\'ead M. Griffin and Alp Sipahigil and Geoffroy Hautier
• Abstract summary: We use first principles computational screening to identify spin-photon interfaces among more than 1000 substitutional and interstitial charged defects in silicon. We evaluate the most promising defects by considering their optical properties, spin multiplicity, and formation energies. We identify three new promising spin-photon interface as potential bright emitters in the telecom band: $rm Ti_i+$, $rm Fe_i0$, and $rm Ru_i0$.
• Score: 5.412164094894868
• License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
• Abstract: Color centers in host semiconductors are prime candidates for spin-photon interfaces that would enable numerous quantum applications. The discovery of an optimal spin-photon interface in silicon would move quantum information technologies towards a mature semiconductor technology. However, the space of possible charged defects in a host is very large, making the identification of promising quantum defects from experiments only extremely challenging. Here, we use high-throughput first principles computational screening to identify spin-photon interfaces among more than 1000 substitutional and interstitial charged defects in silicon. We evaluate the most promising defects by considering their optical properties, spin multiplicity, and formation energies. The use of a single-shot hybrid functional approach is critical in enabling the screening of a large number of defects with a reasonable accuracy in the calculated optical and electronic properties. We identify three new promising spin-photon interface as potential bright emitters in the telecom band: $\rm Ti_{i}^{+}$, $\rm Fe_{i}^{0}$, and $\rm Ru_{i}^{0}$. These candidates are excited through defect-bound excitons, stressing the importance of considering these type of defects in silicon if operations in the telecom band is targeted. Our work paves the way to further large scale computational screening for quantum defects in silicon and other hosts.

Related papers

• Discovery of T center-like quantum defects in silicon [2.5531148052301047]
  Quantum technologies would benefit from the development of high performance quantum defects acting as single-photon emitters or spin-photon interface. We find a series of defects formed by a group III element combined with carbon ((A-C)$rm _Si$ with A=B,Al,Ga,In,Tl) substituting on a silicon site. These defects are analogous structurally, electronically and chemically to the well-known T center in silicon ((C-C-H)$rm_Si$) and their optical properties are mainly driven by an unpaired electron
  arXiv  Detail & Related papers  (2024-05-08T16:02:29Z)
• All-optical modulation with single-photons using electron avalanche [69.65384453064829]
  We demonstrate all-optical modulation using a beam with single-photon intensity. Our approach opens up the possibility of terahertz-speed optical switching at the single-photon level.
  arXiv  Detail & Related papers  (2023-12-18T20:14:15Z)
• Cavity-coupled telecom atomic source in silicon [0.0]
  In this work, we demonstrate the cavity-enhanced fluorescence emission from a single T center. Results represent a significant step towards building efficient T center spin-photon interfaces for quantum information processing and networking applications.
  arXiv  Detail & Related papers  (2023-10-30T21:03:38Z)
• Database of semiconductor point-defect properties for applications in quantum technologies [54.17256385566032]
  We have calculated over 50,000 point defects in various semiconductors including diamond, silicon carbide, and silicon. We characterize the relevant optical and electronic properties of these defects, including formation energies, spin characteristics, transition dipole moments, zero-phonon lines. We find 2331 composite defects which are stable in intrinsic silicon, which are then filtered to identify many new optically bright telecom spin qubit candidates and single-photon sources.
  arXiv  Detail & Related papers  (2023-03-28T19:51:08Z)
• Midgap state requirements for optically active quantum defects [0.0]
  Optically active quantum defects play an important role in quantum sensing, computing, and communication. It is commonly assumed that only quantum defects introducing levels well within the band gap and far from the band edges are of interest for quantum technologies. We show that optically active defects with energy levels close to the band edges can display similar properties.
  arXiv  Detail & Related papers  (2023-02-21T16:07:04Z)
• Review on coherent quantum emitters in hexagonal boron nitride [91.3755431537592]
  I discuss the state-of-the-art of defect centers in hexagonal boron nitride with a focus on optically coherent defect centers. The spectral transition linewidth remains unusually narrow even at room temperature. The field is put into a broad perspective with impact on quantum technology such as quantum optics, quantum photonics as well as spin optomechanics.
  arXiv  Detail & Related papers  (2022-01-31T12:49:43Z)
• Room temperature single-photon emitters in silicon nitride [97.75917079876487]
  We report on the first-time observation of room-temperature single-photon emitters in silicon nitride (SiN) films grown on silicon dioxide substrates. As SiN has recently emerged as one of the most promising materials for integrated quantum photonics, the proposed platform is suitable for scalable fabrication of quantum on-chip devices.
  arXiv  Detail & Related papers  (2021-04-16T14:20:11Z)
• Integrated quantum photonics with silicon carbide: challenges and prospects [0.0]
  Quantum computing protocols place strict limits on the acceptable photon losses in the system. Most materials that host spin defects are challenging to process. Silicon carbide (SiC) is well-suited to bridge the classical-quantum photonics gap.
  arXiv  Detail & Related papers  (2020-10-29T15:44:13Z)
• A multiconfigurational study of the negatively charged nitrogen-vacancy center in diamond [55.58269472099399]
  Deep defects in wide band gap semiconductors have emerged as leading qubit candidates for realizing quantum sensing and information applications. Here we show that unlike single-particle treatments, the multiconfigurational quantum chemistry methods, traditionally reserved for atoms/molecules, accurately describe the many-body characteristics of the electronic states of these defect centers.
  arXiv  Detail & Related papers  (2020-08-24T01:49:54Z)
• Inverse-designed photon extractors for optically addressable defect qubits [48.7576911714538]
  Inverse-design optimization of photonic devices enables unprecedented flexibility in tailoring critical parameters of a spin-photon interface. Inverse-designed devices will enable realization of scalable arrays of single-photon emitters, rapid characterization of new quantum emitters, sensing and efficient heralded entanglement schemes.
  arXiv  Detail & Related papers  (2020-07-24T04:30:14Z)

This list is automatically generated from the titles and abstracts of the papers in this site.

This site does not guarantee the quality of this site (including all information) and is not responsible for any consequences.