A SWAP Gate for Spin Qubits in Silicon
- URL: http://arxiv.org/abs/2310.06700v1
- Date: Tue, 10 Oct 2023 15:24:15 GMT
- Title: A SWAP Gate for Spin Qubits in Silicon
- Authors: Ming Ni, Rong-Long Ma, Zhen-Zhen Kong, Xiao Xue, Sheng-Kai Zhu, Chu
Wang, Ao-Ran Li, Ning Chu, Wei-Zhu Liao, Gang Cao, Gui-Lei Wang, Guang-Can
Guo, Xuedong Hu, Hong-Wen Jiang, Hai-Ou Li and Guo-Ping Guo
- Abstract summary: We show a fast SWAP gate with a duration of 25 ns based on quantum dots in isotopically enriched silicon.
We calibrate the single-qubit local phases during the SWAP gate by incorporating single-qubit gates in our circuit.
These results pave the way for high fidelity SWAP gates, and processes based on them, such as quantum communication on chip and quantum simulation.
- Score: 5.6151418663848744
- License: http://arxiv.org/licenses/nonexclusive-distrib/1.0/
- Abstract: With one- and two-qubit gate fidelities approaching the fault-tolerance
threshold for spin qubits in silicon, how to scale up the architecture and make
large arrays of spin qubits become the more pressing challenges. In a scaled-up
structure, qubit-to-qubit connectivity has crucial impact on gate counts of
quantum error correction and general quantum algorithms. In our toolbox of
quantum gates for spin qubits, SWAP gate is quite versatile: it can help solve
the connectivity problem by realizing both short- and long-range spin state
transfer, and act as a basic two-qubit gate, which can reduce quantum circuit
depth when combined with other two-qubit gates. However, for spin qubits in
silicon quantum dots, high fidelity SWAP gates have not been demonstrated due
to the requirements of large circuit bandwidth and a highly adjustable ratio
between the strength of the exchange coupling J and the Zeeman energy
difference Delta E_z. Here we demonstrate a fast SWAP gate with a duration of
~25 ns based on quantum dots in isotopically enriched silicon, with a highly
adjustable ratio between J and Delta E_z, for over two orders of magnitude in
our device. We are also able to calibrate the single-qubit local phases during
the SWAP gate by incorporating single-qubit gates in our circuit. By
independently reading out the qubits, we probe the anti-correlations between
the two spins, estimate the operation fidelity and analyze the dominant error
sources for our SWAP gate. These results pave the way for high fidelity SWAP
gates, and processes based on them, such as quantum communication on chip and
quantum simulation by engineering the Heisenberg Hamiltonian in silicon.
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