Compact Superconducting Kinetic Inductance Traveling Wave Parametric Amplifiers with On-chip rf Components

• URL: http://arxiv.org/abs/2503.03608v1
• Date: Wed, 05 Mar 2025 15:45:19 GMT
• Title: Compact Superconducting Kinetic Inductance Traveling Wave Parametric Amplifiers with On-chip rf Components
• Authors: Logan Howe, Andrea Giachero, Michael Vissers, Jordan Wheeler, Jason Austermann, Johannes Hubmayr, Joel Ullom,
• Abstract summary: We present the design and validation of microfabricated bias tees and directional couplers for operating three-wave mixing kinetic inductance TWPAs.<n>Our device displays a 2.8 GHz 3 dB bandwidth with a median true gain of 17.5 dB and median system noise of 3.4 quanta.
• Score: 0.0
• License: http://creativecommons.org/licenses/by-nc-nd/4.0/
• Abstract: Quantum computing systems and fundamental physics experiments using superconducting technologies frequently require signal amplification chains operating near the quantum limit of added noise. Both Josephson parametric amplifiers (JPAs) and traveling wave parametric amplifiers (TWPAs) have been used as first-stage amplifiers to enable readout chains operating within a few quanta or less of the quantum limit. These devices are also presently entering the commercial industry. However, nearly all demonstrations and existing products require bulky external microwave components for interconnection and application of requisite biases. These components -- cabling interconnects, bias tees, directional couplers, and diplexers -- increase the overall amplifier footprint, installation complexity, and reduce already limited available cryogenic volumes. Additionally, these components introduce loss and reflections which impact the measurement efficiency and readout system noise performance; thus making it more difficult to operate near the quantum limit. Here we present the design and validation of microfabricated bias tees and directional couplers for operating three-wave mixing kinetic inductance TWPAs (KITs). We report the performance of KITs integrated with the microfabricated rf components. Using these devices we demonstrate reduction in the amplifier installation footprint by a factor of nearly five and elimination of all external, lossy microwave components previously required to operate a KIT. Our device displays a 2.8 GHz 3 dB bandwidth with a median true gain of 17.5 dB and median system noise of 3.4 quanta. These efforts represent the first full integration of all rf components mandatory for TWPA operation on-chip. Our results mark significant progress towards the miniaturization and simplification of parametric amplifier setups and will aid in their more widespread applicability.

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