Related papers: Reflective Dielectric Cavity Enhanced Emission from Hexagonal Boron Nitride Spin Defect Arrays

Reflective Dielectric Cavity Enhanced Emission from Hexagonal Boron Nitride Spin Defect Arrays

URL: http://arxiv.org/abs/2209.00256v1
Date: Thu, 1 Sep 2022 06:34:31 GMT
Title: Reflective Dielectric Cavity Enhanced Emission from Hexagonal Boron Nitride Spin Defect Arrays
Authors: Xiao-Dong Zeng, Yuan-Ze Yang, Nai-Jie Guo, Zhi-Peng Li, Zhao-An Wang, Lin-Ke Xie, Shang Yu, Yu Meng, Qiang Li, Jin-Shi Xu, Wei Liu, Yi-Tao Wang, Jian-Shun Tang, Chuan-Feng Li, Guang-Can Guo
Abstract summary: We demonstrate a robust enhancement structure with advantages including easy on-chip integration, convenient processing, low cost and suitable broad-spectrum enhancement. We achieved a PL enhancement of approximately 7-fold, and the corresponding ODMR contrast achieved 18%. This work has guiding significance for realizing the on-chip integration of spin defects in two-dimensional materials.
Score: 10.645484240543327
License: http://creativecommons.org/licenses/by/4.0/
Abstract: Among the various kinds of spin defects in hBN, the negatively charged boron vacancy ($\rm V_B^-$) spin defect that can be deterministically generated is undoubtedly a potential candidate for quantum sensing, but its low quantum efficiency restricts its %use in practical applications. Here, we demonstrate a robust enhancement structure with advantages including easy on-chip integration, convenient processing, low cost and suitable broad-spectrum enhancement for $\rm V_B^-$ defects. %Improved photoluminescence (PL) intensity and optically detected magnetic resonance (ODMR) contrast of $\rm V_B^-$ defect arrays. In the experiment, we used a metal reflective layer under the hBN flakes, filled with a transition dielectric layer in the middle, and adjusted the thickness of the dielectric layer to achieve the best coupling between the reflective dielectric cavity and the hBN spin defect. Using a reflective dielectric cavity, we achieved a PL enhancement of approximately 7-fold, and the corresponding ODMR contrast achieved 18\%. Additionally, the oxide layer of the reflective dielectric cavity can be used as an integrated material for micro-nano photonic devices for secondary processing, which means that it can be combined with other enhancement structures to achieve stronger enhancement. This work has guiding significance for realizing the on-chip integration of spin defects in two-dimensional materials.

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