Related papers: Reflective Dielectric Cavity Enhanced Emission from Hexagonal Boron Nitride Spin Defect Arrays

Reflective Dielectric Cavity Enhanced Emission from Hexagonal Boron Nitride Spin Defect Arrays

URL: http://arxiv.org/abs/2209.00256v1
Date: Thu, 1 Sep 2022 06:34:31 GMT
Title: Reflective Dielectric Cavity Enhanced Emission from Hexagonal Boron Nitride Spin Defect Arrays
Authors: Xiao-Dong Zeng, Yuan-Ze Yang, Nai-Jie Guo, Zhi-Peng Li, Zhao-An Wang, Lin-Ke Xie, Shang Yu, Yu Meng, Qiang Li, Jin-Shi Xu, Wei Liu, Yi-Tao Wang, Jian-Shun Tang, Chuan-Feng Li, Guang-Can Guo
Abstract summary: We demonstrate a robust enhancement structure with advantages including easy on-chip integration, convenient processing, low cost and suitable broad-spectrum enhancement. We achieved a PL enhancement of approximately 7-fold, and the corresponding ODMR contrast achieved 18%. This work has guiding significance for realizing the on-chip integration of spin defects in two-dimensional materials.
Score: 10.645484240543327
License: http://creativecommons.org/licenses/by/4.0/
Abstract: Among the various kinds of spin defects in hBN, the negatively charged boron vacancy ($\rm V_B^-$) spin defect that can be deterministically generated is undoubtedly a potential candidate for quantum sensing, but its low quantum efficiency restricts its %use in practical applications. Here, we demonstrate a robust enhancement structure with advantages including easy on-chip integration, convenient processing, low cost and suitable broad-spectrum enhancement for $\rm V_B^-$ defects. %Improved photoluminescence (PL) intensity and optically detected magnetic resonance (ODMR) contrast of $\rm V_B^-$ defect arrays. In the experiment, we used a metal reflective layer under the hBN flakes, filled with a transition dielectric layer in the middle, and adjusted the thickness of the dielectric layer to achieve the best coupling between the reflective dielectric cavity and the hBN spin defect. Using a reflective dielectric cavity, we achieved a PL enhancement of approximately 7-fold, and the corresponding ODMR contrast achieved 18\%. Additionally, the oxide layer of the reflective dielectric cavity can be used as an integrated material for micro-nano photonic devices for secondary processing, which means that it can be combined with other enhancement structures to achieve stronger enhancement. This work has guiding significance for realizing the on-chip integration of spin defects in two-dimensional materials.

Related papers

Charge state tuning of spin defects in hexagonal boron nitride [0.143741333314643]
Boron vacancies in hexagonal boron nitride (hBN) are among the most extensively studied optically active spin defects in van der Waals crystals. We demonstrate the tunability of the charge state of boron vacancies in ultrathin hBN layers. This stability makes it a promising candidate for integration into various van der Waals heterostructures.
arXiv Detail & Related papers (2025-01-30T08:51:55Z)
A New Bite Into Dark Matter with the SNSPD-Based QROCODILE Experiment [55.46105000075592]
We present the first results from the Quantum Resolution-d Cryogenic Observatory for Dark matter Incident at Low Energy (QROCODILE) The QROCODILE experiment uses a microwire-based superconducting nanowire single-photon detector (SNSPD) as a target and sensor for dark matter scattering and absorption. We report new world-leading constraints on the interactions of sub-MeV dark matter particles with masses as low as 30 keV.
arXiv Detail & Related papers (2024-12-20T19:00:00Z)
Single photon emitters in monolayer semiconductors coupled to transition metal dichalcogenide nanoantennas on silica and gold substrates [49.87501877273686]
Transition metal dichalcogenide (TMD) single photon emitters offer numerous advantages to quantum information applications. Traditional materials used for the fabrication of nanoresonators, such as silicon or gallium phosphide (GaP), often require a high refractive index substrate. Here, we use nanoantennas (NAs) fabricated from multilayer TMDs, which allow complete flexibility with the choice of substrate.
arXiv Detail & Related papers (2024-08-02T07:44:29Z)
Site-Controlled Purcell-Induced Bright Single Photon Emitters in Hexagonal Boron Nitride [62.170141783047974]
Single photon emitters hosted in hexagonal boron nitride (hBN) are essential building blocks for quantum photonic technologies that operate at room temperature. We experimentally demonstrate large-area arrays of plasmonic nanoresonators for Purcell-induced site-controlled SPEs. Our results offer arrays of bright, heterogeneously integrated quantum light sources, paving the way for robust and scalable quantum information systems.
arXiv Detail & Related papers (2024-05-03T23:02:30Z)
Quantum Emitters in Aluminum Nitride Induced by Zirconium Ion Implantation [70.64959705888512]
This study investigates aluminum nitride (AlN) as a material with properties highly suitable for integrated on-chip photonics. We conduct a comprehensive study of the creation and photophysical properties of single-photon emitters in AlN utilizing Zirconium (Zr) and Krypton (Kr) heavy ion implantation. With the 532 nm excitation wavelength, we found that single-photon emitters induced by ion implantation are primarily associated with vacancy-type defects in the AlN lattice for both Zr and Kr ions.
arXiv Detail & Related papers (2024-01-26T03:50:33Z)
Cavity-Enhanced 2D Material Quantum Emitters Deterministically Integrated with Silicon Nitride Microresonators [0.3518016233072556]
Optically active defects in 2D materials, such as hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDs), are an attractive class of single-photon emitters. We demonstrate a novel approach to precisely align and embed hBN and TMDs within background-free silicon nitride microring resonators.
arXiv Detail & Related papers (2022-06-29T18:16:38Z)
Defect polaritons from first principles [0.0]
We investigate three defect types -- CHB, CB-CB, and CB-VN -- in monolayer hexagonal boron nitride (hBN) For all defect systems, we show that the polaritonic splitting that shifts the absorption energy of the lower polariton is much higher than can be expected from a Jaynes-Cummings interaction. We find that initially localized electronic transition densities can become delocalized across the entire material under strong light-matter coupling.
arXiv Detail & Related papers (2021-05-04T18:00:00Z)
Room-temperature optically detected magnetic resonance of single defects in hexagonal boron nitride [0.0]
We report optically detected magnetic resonance (ODMR) from carbon-related defects in 2d hexagonal boron nitride (hBN) Our results offer a promising route towards realising a room-temperature spin-photon quantum interface in hBN.
arXiv Detail & Related papers (2021-03-30T16:50:59Z)
Inverse-designed photon extractors for optically addressable defect qubits [48.7576911714538]
Inverse-design optimization of photonic devices enables unprecedented flexibility in tailoring critical parameters of a spin-photon interface. Inverse-designed devices will enable realization of scalable arrays of single-photon emitters, rapid characterization of new quantum emitters, sensing and efficient heralded entanglement schemes.
arXiv Detail & Related papers (2020-07-24T04:30:14Z)
Tunable quantum photonics platform based on fiber-cavity enhanced single photon emission from two-dimensional hBN [52.915502553459724]
In this work we present a hybrid system consisting of defect centers in few-layer hBN grown by chemical vapor deposition and a fiber-based Fabry-Perot cavity. We achieve very large cavity-assisted signal enhancement up to 50-fold and equally strong linewidth narrowing owing to cavity funneling. Our work marks an important milestone for the deployment of 2D materials coupled to fiber-based cavities in practical quantum technologies.
arXiv Detail & Related papers (2020-06-23T14:20:46Z)

This list is automatically generated from the titles and abstracts of the papers in this site.