Thin-Film InGaAs Metamorphic Buffer for telecom C-band InAs Quantum Dots and Optical Resonators on GaAs Platform

• URL: http://arxiv.org/abs/2107.13371v2
• Date: Mon, 2 Aug 2021 14:01:55 GMT
• Title: Thin-Film InGaAs Metamorphic Buffer for telecom C-band InAs Quantum Dots and Optical Resonators on GaAs Platform
• Authors: Robert Sittig, Cornelius Nawrath, Sascha Kolatschek, Stephanie Bauer, Richard Schaber, Jiasheng Huang, Ponraj Vijayan, Simone Luca Portalupi, Michael Jetter, Peter Michler
• Abstract summary: Single-photon emission at 1550nm from InAs QDs deposited on top of a novel thin-film MMB is demonstrated. Advances in the epitaxial growth of QD/MMB structures form the basis for the fabrication of high-quality telecom non-classical light sources.
• Score: 0.0
• License: http://creativecommons.org/licenses/by/4.0/
• Abstract: The GaAs-based material system is well-known for the implementation of InAs quantum dots (QDs) with outstanding optical properties. However, these dots typically emit at a wavelength of around 900nm. The insertion of a metamorphic buffer (MMB) can shift the emission to the technologically attractive telecom C-band range centered at 1550nm. However, the thickness of common MMB designs limits their compatibility with most photonic resonator types. Here we report on the MOVPE growth of a novel InGaAs MMB with a non-linear indium content grading profile designed to maximize plastic relaxation within minimal layer thickness. Single-photon emission at 1550nm from InAs QDs deposited on top of this thin-film MMB is demonstrated. The strength of the new design is proven by integrating it into a bullseye cavity via nano-structuring techniques. The presented advances in the epitaxial growth of QD/MMB structures form the basis for the fabrication of high-quality telecom non-classical light sources as a key component of photonic quantum technologies.

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